AS4C16M16D1A-5TCN

Alliance Memory
913-4C16M16D1A5TCN
AS4C16M16D1A-5TCN

Mfr.:

Description:
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp (A)

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 674

Stock:
674 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,18 € 4,18 €
3,90 € 39,00 €
3,78 € 94,50 €
3,69 € 184,50 €
3,59 € 387,72 €
3,46 € 747,36 €
3,40 € 1.836,00 €
3,31 € 3.574,80 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM - DDR
256 Mbit
16 bit
200 MHz
TSOP-II-66
16 M x 16
700 ps
2.3 V
2.7 V
0 C
+ 70 C
AS4C16M16D1A
Tray
Brand: Alliance Memory
Country of Assembly: TW
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 70 mA
Unit Weight: 1,400 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8542329000
USHTS:
8542320024
JPHTS:
854232021
KRHTS:
8542321010
MXHTS:
8542320201
ECCN:
EAR99

DDR1 Synchronous DRAM

Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.