AS4C16M16SB-7TCN

Alliance Memory
913-AS4C16M16SB-7TCN
AS4C16M16SB-7TCN

Mfr.:

Description:
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray

Datasheet:
ECAD Model:
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More Information
Learn more about Alliance Memory AS4C16M16SB-7TCN

In Stock: 1.497

Stock:
1.497 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,59 € 5,59 €
5,20 € 52,00 €
5,05 € 126,25 €
4,53 € 226,50 €
4,42 € 477,36 €
4,33 € 935,28 €

Alternative Packaging

Mfr. Part No.:
AS4C16M16SB-7TCNTR
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
4,10 €
Min:
1

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
16 bit
143 MHz
TSOP-II-54
16 M x 16
5.4 ns
3 V
3.6 V
0 C
+ 70 C
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 55 mA
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Attributes selected: 0

Datasheet

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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320028
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

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