AS4C1M16S-6TCN

Alliance Memory
913-AS4C1M16S-6TCN
AS4C1M16S-6TCN

Mfr.:

Description:
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Commercial Temp - Tray

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about Alliance Memory AS4C1M16S-6TCN

In Stock: 348

Stock:
348 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,90 € 2,90 €
2,71 € 27,10 €
2,63 € 65,75 €
2,57 € 128,50 €
2,55 € 298,35 €
2,45 € 573,30 €
2,29 € 1.339,65 €
2,24 € 2.358,72 €
2,12 € 5.456,88 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
16 Mbit
16 bit
166 MHz
TSOP-II-50
1 M x 16
5.4 ns
3 V
3.6 V
0 C
+ 70 C
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 117
Subcategory: Memory & Data Storage
Supply Current - Max: 80 mA
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Attributes selected: 0

Datasheet

CNHTS:
8542329000
USHTS:
8542320002
JPHTS:
854232021
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.

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