AS4C32M8SA-6TIN

Alliance Memory
913-AS4C32M8SA6TIN
AS4C32M8SA-6TIN

Mfr.:

Description:
DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 230

Stock:
230 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,58 € 5,58 €
5,19 € 51,90 €
5,04 € 126,00 €
4,93 € 246,50 €
4,79 € 517,32 €
4,45 € 961,20 €
4,36 € 2.354,40 €
4,27 € 4.611,60 €
4,08 € 10.575,36 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
8 bit
166 MHz
TSOP-II-54
32 M x 8
5 ns
3 V
3.6 V
- 40 C
+ 85 C
AS4C32M8SA
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 60 mA
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320024
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.