AS4C4M32S-7BCN

Alliance Memory
913-AS4C4M32S-7BCN
AS4C4M32S-7BCN

Mfr.:

Description:
DRAM SDRAM, 128Mb, 4M x 32, 3.3V, 90-ball BGA, 143 MHz, Commercial Temp - Tray

Datasheet:
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Learn more about Alliance Memory AS4C4M32S-7BCN

In Stock: 57

Stock:
57 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,96 € 5,96 €
5,55 € 55,50 €
5,38 € 134,50 €
5,25 € 262,50 €
5,01 € 501,00 €
4,88 € 927,20 €
4,69 € 2.673,30 €
4,59 € 5.232,60 €
4,38 € 11.650,80 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
128 Mbit
32 bit
133 MHz
TFBGA-90
4 M x 32
5.4 ns
3 V
3.6 V
0 C
+ 70 C
AS4C4M32S
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 190
Subcategory: Memory & Data Storage
Supply Current - Max: 160 mA
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Attributes selected: 0

Datasheet

CNHTS:
8542319090
USHTS:
8542320002
JPHTS:
854232021
KRHTS:
8542321010
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.

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