AS4C64M4SA-6TIN

Alliance Memory
913-AS4C64M4SA-6TIN
AS4C64M4SA-6TIN

Mfr.:

Description:
DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tray

ECAD Model:
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In Stock: 57

Stock:
57 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,99 € 5,99 €
5,58 € 55,80 €
5,41 € 135,25 €
5,29 € 264,50 €
4,94 € 533,52 €
4,85 € 1.047,60 €
4,80 € 2.592,00 €
4,74 € 5.119,20 €
4,53 € 11.741,76 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
4 bit
166 MHz
TSOP-II-54
64 M x 4
5 ns
3 V
3.6 V
- 40 C
+ 85 C
AS4C64M4SA
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 60 mA
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Attributes selected: 0

CNHTS:
8542320000
CAHTS:
8542320020
USHTS:
8542320024
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.