BIDW75N65ES5

Bourns
652-BIDW75N65ES5
BIDW75N65ES5

Mfr.:

Description:
IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L

ECAD Model:
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In Stock: 2.783

Stock:
2.783 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,42 € 6,42 €
3,24 € 32,40 €

Product Attribute Attribute Value Select Attribute
Bourns
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.42 V
20 V
150 A
394 W
- 40 C
+ 175 C
BID
Tube
Brand: Bourns
Continuous Collector Current Ic Max: 150 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.