CDMS24740-170 SL PBFREE

Central Semiconductor
610-CDMS24740-170SL
CDMS24740-170 SL PBFREE

Mfr.:

Description:
SiC MOSFETs 1700V Through-Hole MOSFET N-Channel SiC

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Central Semiconductor CDMS24740-170 SL PBFREE

In Stock: 27

Stock:
27
Can Dispatch Immediately
On Order:
30
Factory Lead Time:
3
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
34,01 € 34,01 €
27,83 € 278,30 €
24,59 € 2.950,80 €
510 Quote

Product Attribute Attribute Value Select Attribute
Central Semiconductor
Product Category: SiC MOSFETs
Through Hole
TO-247-3
N-Channel
1 Channel
1.7 kV
26 A
40 mOhms
20 V
2.4 V
- 55 C
+ 175 C
28 W
Depletion
Brand: Central Semiconductor
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 25 ns
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 35 ns
Series: CDMS247
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 35 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

1,700 V N-Channel Silicon Carbide (SiC) MOSFETs

Central Semiconductor 1700V N-Channel Silicon Carbide (SiC) MOSFETs are designed for high-speed switching and fast reverse recovery applications. These MOSFETs feature a gate-source voltage (VGS) rating of 20V and a continuous drain current (ID) of 37A (CDMS24720-170) or 26A (CDMS24740-170). Both devices have a 28W power dissipation (PD) rating and are packaged in a TO-247 with an operating temperature range of -55°C to 175°C. These Central Semiconductor 1700V SiC MOSFETs support higher breakdown voltage and better thermal conductivity.

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