EPC2367

EPC
65-EPC2367
EPC2367

Mfr.:

Description:
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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In Stock: 14.250

Stock:
14.250 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,93 € 5,93 €
4,00 € 40,00 €
2,97 € 297,00 €
2,80 € 2.800,00 €
Full Reel (Order in multiples of 3000)
2,52 € 7.560,00 €

Product Attribute Attribute Value Select Attribute
EPC
Product Category: GaN FETs
RoHS:  
SMD/SMT
QFN-5
N-Channel
1 Channel
100 V
101 A
1.2 mOhms
6 V, - 4 V
2.5 V
17 nC
- 40 C
+ 150 C
Enhancement
eGaN FET
Brand: EPC
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Product: Power Transistor
Product Type: GaN FETs
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 N-Channel
Unit Weight: 20,300 mg
Products found:
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

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