IS62WV6416ALL-55BLI

ISSI
870-62WV6416A55BLI
IS62WV6416ALL-55BLI

Mfr.:

Description:
SRAM 1Mb, Low Power/Power Saver,Async,64K x 16,55ns,1.65v-2.2v,48 Ball mBGA (6x8 mm), RoHS

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 480   Multiples: 480
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,12 € 1.497,60 €
3,09 € 2.966,40 €
3,04 € 8.755,20 €

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
Delivery Alerts:
 This product may require additional documentation to export from the United States.
RoHS:  
1 Mbit
55 ns
2.2 V
1.7 V
5 mA
- 40 C
+ 85 C
SMD/SMT
BGA-48
Tray
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Data Rate: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS62WV6416ALL
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
Type: Asynchronous
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TARIC:
8542324500
CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
8542320194
KRHTS:
8542321020
MXHTS:
8542320299
ECCN:
3A001.B.2.B

Ultra-Low Power SRAM

ISSI Ultra-Low Power SRAM includes high-speed (35ns, 45ns, 55ns access time) CMOS devices as well as Asynchronous SRAM with x8, x16, and x32 configurations. ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2Mb static RAMs organized as 256K words by 8 bits. These SRAM devices are fabricated using ISSI high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power-consumption devices. ISSI Asynchronous SRAMs include 5V, High-Speed/Low Power, Ultra-Low Power, and Pseudo SRAM (PSRAM)/CellularRAM™. These Asynchronous SRAMs are used throughout Consumer, Industrial, Automotive, Telecom, and Networking applications.