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IXBH20N300

Name: IXYS IXBH20N300
Brand: IXYS
SKU: 747-IXBH20N300
Price: 62.48 EUR
Availability: InStock

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Mouser No:

747-IXBH20N300

Mfr. No:

IXBH20N300

Mfr.:

IXYS

Description:

IGBTs Disc IGBT BiMSFT-VeryHiVolt TO-247AD

Datasheet:

IXBH20N300 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXBH20N300

In Stock: 281

Stock:: 281 Can Dispatch Immediately

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 281 will be subject to minimum order requirements.

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Unit Price:

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	62,48 €	62,48 €
	56,26 €	562,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	3 kV
Collector-Emitter Saturation Voltage:	3.2 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	250 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	Very High Voltage
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	50 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	BIMOSFET
Unit Weight:	1,600 g

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Datasheet

IXBH20N300 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Medical Equipment Solutions

Littelfuse Medical Equipment Solutions provide robust designed and quality components needed to help with reliable operating and equipment up-time. These solutions include ventilators, defibrillator, and ultrasounds. Littelfuse Medical Equipment Solutions are ideal for life support systems, patient care equipment, and patient monitoring systems.

High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high L_di/dt voltage transients from inflicting damage to the device.