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IXBN75N170A

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Mouser No:

747-IXBN75N170A

Mfr. No:

IXBN75N170A

Mfr.:

IXYS

Description:

IGBTs 75 Amps 1700V 6.00 Rds

Datasheet:

IXBN75N170A Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	SOT-227B-4
Mounting Style:	Screw Mount
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.7 kV
Collector-Emitter Saturation Voltage:	4.95 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	75 A
Pd - Power Dissipation:	625 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXBN75N170
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	350 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	10
Subcategory:	IGBTs
Tradename:	BIMOSFET
Unit Weight:	30 g

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Datasheet

IXBN75N170A Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

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