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IXFQ8N85X

Name: IXYS IXFQ8N85X
Brand: IXYS
SKU: 747-IXFQ8N85X
Price: 6.82 EUR
Availability: InStock

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Mouser No:

747-IXFQ8N85X

Mfr. No:

IXFQ8N85X

Mfr.:

IXYS

Description:

MOSFETs TO3P 850V 8A N-CH XCLASS

Datasheet:

IXFQ8N85X Datasheet

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In Stock: 263

Stock:: 263 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,82 €	6,82 €
	4,12 €	41,20 €
	3,16 €	379,20 €
	2,92 €	1.489,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3P-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	850 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	850 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	17 nC
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	23 ns
Forward Transconductance - Min:	2.7 S
Product Type:	MOSFETs
Rise Time:	25 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	1,600 g

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Datasheet

IXFQ8N85X Datasheet

PCN

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Off-Board Charger Sub-Unit Power Converters

Littelfuse Off-Board Charger Sub-Unit Power Converters are required for DC charging stations capable of charging to 80% SOC in under 30 minutes. These fast-charging applications require modular power converters, which can be paralleled to cater to different power levels, thereby enabling fast charging. The most critical parameters are energy density and system efficiency. A sub-unit power converter in a DC charging station consists of an AC/DC power stage and DC/DC power stage integrated into the charging station.

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

X-Class Power MOSFETs

IXYS X-Class Power MOSFETs are high-power density N-Channel Enhancement Mode MOSFETs. They are easy to mount and have a low R_DS(ON) and Q_Gwith a low package inductance. Typical applications include switch-mode and resonant-mode power supplies, DC-DC converters and PFC circuits.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Off-Highway Electric Vehicle Solutions

Littelfuse provides a wide range of solutions for off-highway electric vehicles. These electric vehicles share a similar architecture and have a power range from 48V to 400V. Off-highway electric vehicles include electric forklifts, golf carts, three-wheelers, tow tractors, compactors, and excavators.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.