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IXYN200N65B5

Name: IXYS IXYN200N65B5
Brand: IXYS
SKU: 747-IXYN200N65B5
Price: 31.24 EUR
Availability: InStock

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Mouser No:

747-IXYN200N65B5

Mfr. No:

IXYN200N65B5

Mfr.:

IXYS

Description:

IGBTs 650V, 200A, XPT Gen5 B5 IGBT in SOT-227

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXYN200N65B5 Datasheet (PDF)

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In Stock: 396

Stock:: 396 Can Dispatch Immediately

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Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	31,24 €	31,24 €
	23,17 €	231,70 €
	21,46 €	10.730,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	SOT-227B-4
Mounting Style:	Screw Mount
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.2 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	390 A
Pd - Power Dissipation:	1.2 kW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	390 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	300 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	10
Subcategory:	IGBTs
Tradename:	XPT

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Datasheet

IXYN200N65B5 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

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Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

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Gen5 XPT IGBTs

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