1ED2127S65FXUMA1

Infineon Technologies
726-1ED2127S65FXUMA
1ED2127S65FXUMA1

Mfr.:

Description:
Gate Drivers 650V high-side gate driver

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies 1ED2127S65FXUMA1

In Stock: 2.424

Stock:
2.424 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,29 € 1,29 €
0,946 € 9,46 €
0,851 € 21,28 €
0,755 € 75,50 €
0,71 € 177,50 €
0,682 € 341,00 €
0,66 € 660,00 €
Full Reel (Order in multiples of 2500)
0,609 € 1.522,50 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
Gate Drivers
High-Side
SMD/SMT
PG-DSO-8
1 Driver
1 Output
4 A
25 V
Inverting
12 ns
12 ns
- 40 C
+ 125 C
Reel
Cut Tape
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Maximum Turn-Off Delay Time: 80 ns
Maximum Turn-On Delay Time: 80 ns
Moisture Sensitive: Yes
Operating Supply Current: 270 uA
Output Voltage: 460 mV
Pd - Power Dissipation: 625 mW
Product Type: Gate Drivers
Propagation Delay - Max: 410 ns
Rds On - Drain-Source Resistance: 50 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: SiC
Tradename: EiceDRIVER
Part # Aliases: 1ED2127S65F SP005826769
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Attributes selected: 0

Datasheet

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USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

EiceDRIVER™ 1ED21x7x 650V High-Side Gate Drivers

Infineon Technologies EiceDRIVER™ 1ED21x7x 650V High-Side Gate Drivers are designed to provide robust and efficient control for high-voltage power transistors. These Infineon gate drivers feature a high-side driver architecture that supports a wide range of applications, including motor drives, solar inverters, and industrial power supplies. With a maximum voltage rating of 650V, the 1ED21x7x series ensures reliable operation in demanding environments. Key features include integrated bootstrap diodes, fast switching capabilities, and comprehensive protection mechanisms such as undervoltage lockout (UVLO) and overcurrent protection. These attributes make the EiceDRIVER™ 1ED21x7x series an ideal choice for enhancing the performance and reliability of high-voltage power systems.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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