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AIKQB160N75CP2ALSA1

Name: Infineon AIKQB160N75CP2ALSA1
Brand: Infineon Technologies
SKU: 726-AIKQB160N75CP2AL
Price: 10.77 EUR
Availability: InStock

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Mouser No:

726-AIKQB160N75CP2AL

Mfr. No:

AIKQB160N75CP2ALSA1

Mfr.:

Infineon Technologies

Description:

IGBTs Automotive EDT2 IGBT in TO-247PLUS reflow

Lifecycle:

New At Mouser

Datasheet:

AIKQB160N75CP2ALSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies AIKQB160N75CP2ALSA1

In Stock: 240

Stock:: 240

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On Order:: 240
Factory Lead Time:: 10

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	10,77 €	10,77 €
	6,50 €	65,00 €
	6,07 €	607,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Series:	750V EDT2
Qualification:	AEC-A101
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Moisture Sensitive:	Yes
Product Type:	IGBTs
Factory Pack Quantity:	240
Subcategory:	Transistors
Tradename:	EDT2
Part # Aliases:	AIKQB160N75CP2 SP006090612

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Datasheet

AIKQB160N75CP2ALSA1 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive IGBT EDT2 Discretes

Infineon Technologies Automotive IGBT EDT2 Discretes offer benchmark 750V IGBT technology that significantly improves the energy efficiency for automotive drivetrain applications. The technology supports DC link voltages up to 470V and features remarkably low switching and conduction losses. EDT2 technology has extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability to final designs. The Infineon Technologies AEC-Q101-qualified EDT2 IGBTs can feature a higher blocking voltage and 20% lower saturation voltage than the established IGBT3 series. Optimization of the cell structure allows switching with high gradients. A robust and rugged design avoids latch-ups and allows sufficient short-circuit protection.