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BFP 193W H6327

Name: Infineon BFP 193W H6327
Brand: Infineon Technologies
SKU: 726-BFP193WH6327
Price: 0.53 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-BFP193WH6327

Mfr. No:

BFP 193W H6327

Mfr.:

Infineon Technologies

Description:

RF Bipolar Transistors RF BIP TRANSISTOR

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

BFP 193W H6327 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies BFP 193W H6327

In Stock: 735

Stock:: 735 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,533 €	0,53 €
	0,329 €	3,29 €
	0,215 €	21,50 €
	0,159 €	79,50 €
	0,138 €	138,00 €
Full Reel (Order in multiples of 3000)
	0,105 €	315,00 €

Alternative Packaging

Mfr. Part No.:

BFP193WH6327XTSA1

Packaging:

Reel, Cut Tape

Availability:

In Stock

Price:

0,24 €

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFP193
Transistor Type:	Bipolar
Technology:	Si
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	CN
Country of Diffusion:	DE
Country of Origin:	CN
Product Type:	RF Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	SP000745248 BFP193WH6327XT BFP193WH6327XTSA1
Unit Weight:	6,740 mg

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Filter Document:

Datasheet

BFP 193W H6327 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541219000
MXHTS:: 85412999
ECCN:: EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.