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BSC0702LSATMA1

Name: Infineon BSC0702LSATMA1
Brand: Infineon Technologies
SKU: 726-BSC0702LSATMA1
Price: 1.76 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-BSC0702LSATMA1

Mfr. No:

BSC0702LSATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs DIFFERENTIATED MOSFETS

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

BSC0702LSATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BSC0702LSATMA1

In Stock: 3.283

Stock:: 3.283 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,76 €	1,76 €
	1,13 €	11,30 €
	0,755 €	75,50 €
	0,598 €	299,00 €
	0,505 €	505,00 €
Full Reel (Order in multiples of 5000)
	0,426 €	2.130,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	2.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	30 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	5.4 ns
Forward Transconductance - Min:	60 S
Product Type:	MOSFETs
Rise Time:	4.8 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	7.7 ns
Part # Aliases:	BSC0702LS SP001589462
Unit Weight:	118,510 mg

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Filter Document:

Datasheet

BSC0702LSATMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

OptiMOS™ PD (Power Delivery) MOSFETs

Infineon Technologies OptiMOS™ PD (Power Delivery) MOSFETs are ideal for USB-PD and fast-charger designs, supporting short lead and quick-quote response times. The logic-level MOSFETs in PQFN 3.3mm x 3.3mm and SuperSO8 packages have been optimized for synchronous rectification in charger and adapter 25V to 150V SMPS applications. The logic-level drive provides a low gate threshold voltage (VGS(th)), allowing low- and medium-voltage MOSFETs to be driven from 4.5V or directly from microcontrollers, leading to a lower part count in the application.