CY7C1512KV18-250BZIT

Infineon Technologies
727-CY7C1512KV18250
CY7C1512KV18-250BZIT

Mfr.:

Description:
SRAM 72Mb 1.8V 4M x 18 250Mhz QDR II SRAM

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1000)
191,97 € 191.970,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SRAM
RoHS: N
72 Mbit
4 M x 18
450 ps
250 MHz
Parallel
1.9 V
1.7 V
650 mA
- 40 C
+ 85 C
SMD/SMT
FBGA-165
Reel
Brand: Infineon Technologies
Country of Assembly: TH
Country of Diffusion: TW
Country of Origin: PH
Memory Type: Volatile
Moisture Sensitive: Yes
Product Type: SRAM
Series: CY7C1512KV18
Factory Pack Quantity: 1000
Subcategory: Memory & Data Storage
Type: Synchronous
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TARIC:
8542324500
CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
8542320194
KRHTS:
8542321020
MXHTS:
8542320299
ECCN:
3A991.b.2.b

QDR™-II DDR-II Sync SRAM

Infineon Technologies QDR™-II DDR-II Sync SRAM offers a maximum speed of 333MHz, densities up to 144Mb, read latencies of 1.5 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. The QDR-II family also includes double data rate (DDR-II) devices. DDR-II devices are similar to QDR-II devices, except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and write, reducing the number of required data pin connections.