F46MR20W3M1HB11BPSA1

Infineon Technologies
726-F46MR20W3M1HB11B
F46MR20W3M1HB11BPSA1

Mfr.:

Description:
MOSFET Modules EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 3

Stock:
3 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
489,39 € 489,39 €
423,22 € 3.385,76 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFET Modules
RoHS:  
SiC
Press Fit
N-Channel
1 Channel
1.2 kV
470 A
1.91 Ohms
- 7 V, + 20 V
5.15 V
- 40 C
+ 175 C
20 mW
EasyPACK
Tray
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: AT
Fall Time: 74 ns
Product: Modules
Product Type: MOSFET Modules
Rise Time: 261 ns
Factory Pack Quantity: 8
Subcategory: Discrete and Power Modules
Typical Turn-Off Delay Time: 276 ns
Typical Turn-On Delay Time: 156 ns
Part # Aliases: F4-6MR20W3M1H_B11 SP005975717
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TARIC:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99

EasyPACK™ CoolSiC™ Trench MOSFET Modules

Infineon Technologies EasyPACK™ CoolSiC™ Trench MOSFET Modules feature PressFIT contact technology and an integrated Negative Temperature Coefficient (NTC) temperature sensor. These modules operate at a 1200V drain-source voltage, feature a low inductive design, low switching losses, and high current density. The EasyPACK™ modules offer rugged mounting due to integrated mounting clamps and are packaged with a CTI >600. Applications include high-frequency switching devices, DC/DC converters, and DC chargers for EVs. With the Easy 2C Series, Infineon enhances high-power designs using SiC G2 technology and advanced .XT features. The .XT technology provides enhanced ruggedness and extended operating temperatures, while the second-generation SiC MOSFET technology offers improved gate oxide reliability and reduced on-resistance.