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FF450R33T3E3BPSA1

Name: Infineon FF450R33T3E3BPSA1
Brand: Infineon Technologies
SKU: 726-FF450R33T3E3BPSA
Price: 1278.18 EUR
Availability: InStock

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Mouser No:

726-FF450R33T3E3BPSA

Mfr. No:

FF450R33T3E3BPSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules 3300 V, 450 A dual IGBT module

Datasheet:

FF450R33T3E3BPSA1 Datasheet (PDF)

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1.278,18 €	1.278,18 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
Delivery Alerts:	This product may require additional documentation to export from the United States.
RoHS:
Product:	IGBT Silicon Modules
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	3.3 kV
Collector-Emitter Saturation Voltage:	2.5 V
Continuous Collector Current at 25 C:	450 A
Gate-Emitter Leakage Current:	400 nA
Pd - Power Dissipation:	1 MW
Package/Case:	AG-XHP100-3
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
Series:	Trenchstop IGBT3 - E3
Factory Pack Quantity:	1
Subcategory:	IGBTs
Technology:	Si
Tradename:	TRENCHSTOP XHP
Part # Aliases:	FF450R33T3E3 SP001779538
Unit Weight:	700 g

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Datasheet

FF450R33T3E3BPSA1 Datasheet (PDF)

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TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: 3A228.c

FF450R33T3E3/_B5 XHP™ 3 IGBT Module

Infineon Technologies FF450R33T3E3/_B5 XHP™ 3 IGBT Module is a 3.3kV, 450A Dual Insulated Gate Bipolar Transistor Module with TRENCHSTOP™ IGBT3 and an emitter controlled diode. Designed specifically for high-power operations, the highly integrated XHP IGBT Modules cover the full-voltage range of IGBT chips from 3.3kV to 6.5kV. Sharing the same compact 140mm x 100mm x 40mm dimensions, these IGBT Modules allow for scalable design with best-in-class reliability and high power density. The FF450R33T3E3B5 IGBT module features enhanced isolation of 10.4kV.