FS150R12N3T7BPSA1

Infineon Technologies
726-FS150R12N3T7BPS1
FS150R12N3T7BPSA1

Mfr.:

Description:
IGBT Modules LOW POWER ECONO

Datasheet:
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Learn more about Infineon Technologies FS150R12N3T7BPSA1

In Stock: 1

Stock:
1 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
108,46 € 108,46 €
90,22 € 902,20 €
82,18 € 8.218,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBT Modules
RoHS:  
IGBT Silicon Modules
6-Pack
1.2 kV
1.55 V
150 A
100 nA
- 40 C
+ 175 C
Tray
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: HU
Product Type: IGBT Modules
Series: FSXR12N3X7G
Factory Pack Quantity: 10
Subcategory: IGBTs
Technology: Si
Part # Aliases: FS150R12N3T7 SP004145224
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Datasheet

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TARIC:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99

1200V Sixpack IGBT Modules

Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.

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