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IDDD10G65C6XTMA1

Name: Infineon IDDD10G65C6XTMA1
Brand: Infineon Technologies
SKU: 726-IDDD10G65C6XTMA1
Price: 3.04 EUR
Availability: InStock

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Mouser No:

726-IDDD10G65C6XTMA1

Mfr. No:

IDDD10G65C6XTMA1

Mfr.:

Infineon Technologies

Description:

SiC Schottky Diodes SIC DIODES

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IDDD10G65C6XTMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IDDD10G65C6XTMA1

In Stock: 8.445

Stock:: 8.445

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On Order:: 3.400
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,04 €	3,04 €
	2,27 €	22,70 €
	1,85 €	185,00 €
	1,73 €	865,00 €
	1,62 €	1.620,00 €
Full Reel (Order in multiples of 1700)
	1,47 €	2.499,00 €

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

IDH10G65C6XKSA1

Description:

SiC Schottky Diodes SIC DIODES

Lifecycle:

NRND: Not recommended for new designs.

Compare With Current Part

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	HDSOP-10
Configuration:	Single
If - Forward Current:	29 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.25 V
Ifsm - Forward Surge Current:	55 A
Ir - Reverse Current:	1 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	XDDD10G65
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Pd - Power Dissipation:	105 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1700
Subcategory:	Diodes & Rectifiers
Tradename:	CoolSiC
Vr - Reverse Voltage:	650 V
Part # Aliases:	IDDD10G65C6 SP001679790
Unit Weight:	760,160 mg

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CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
MXHTS:: 8541100101
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolSiC™ 650V Schottky 6th Generation Diodes

Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology, and a novel Schottky metal system. The design of this Infineon series results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC Generation 6 complements the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.