IKW50N65SS5XKSA1

Infineon Technologies
726-IKW50N65SS5XKSA1
IKW50N65SS5XKSA1

Mfr.:

Description:
IGBTs 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode

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In Stock: 552

Stock:
552 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,13 € 8,13 €
4,78 € 47,80 €
4,13 € 413,00 €
3,90 € 1.872,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
Si
TO-247-3
Through Hole
Single
650 V
1.35 V
- 20 V, 20 V
80 A
274 W
- 40 C
+ 175 C
Trenchstop IGBT5 S5
Tube
Brand: Infineon Technologies
Country of Assembly: CN
Country of Diffusion: DE
Country of Origin: AT
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP ~ CoolSiC
Part # Aliases: IKW50N65SS5 SP001668430
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

TRENCHSTOP™ 5 IGBTs

Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs

Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction, and PCB bill of material cost optimization. Infineon S5 IGBTs are packed with features to help designers achieve goals without the need to increase circuit complexity.