IMZA65R072M1HXKSA1

Infineon Technologies
726-IMZA65R072M1HXKS
IMZA65R072M1HXKSA1

Mfr.:

Description:
SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
52 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,47 € 6,47 €
3,75 € 37,50 €
3,44 € 344,00 €
3,33 € 1.598,40 €

Similar Product

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SiC MOSFETs SILICON CARBIDE MOSFET
New Product: New from this manufacturer.
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
28 A
94 mOhms
- 5 V, + 23 V
5.7 V
22 nC
- 55 C
+ 150 C
96 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: AT
Fall Time: 5.6 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 8.6 ns
Series: IMZA65R072
Factory Pack Quantity: 240
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 21.6 ns
Typical Turn-On Delay Time: 15.2 ns
Part # Aliases: IMZA65R072M1H SP005398434
Unit Weight: 6 g
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Attributes selected: 0

Datasheet

Models

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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency. 

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