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IPB020N10N5LFATMA1

Name: Infineon IPB020N10N5LFATMA1
Brand: Infineon Technologies
SKU: 726-IPB020N10N5LFATM
Price: 5.82 EUR
Availability: InStock

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Mouser No:

726-IPB020N10N5LFATM

Mfr. No:

IPB020N10N5LFATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs DIFFERENTIATED MOSFETS

Datasheet:

IPB020N10N5LFATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPB020N10N5LFATMA1

In Stock: 4.282

Stock:: 4.282 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	5,82 €	5,82 €
	3,82 €	38,20 €
	2,82 €	282,00 €
	2,55 €	1.275,00 €
Full Reel (Order in multiples of 1000)
	2,38 €	2.380,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	210 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	29 ns
Forward Transconductance - Min:	124 S
Product Type:	MOSFETs
Rise Time:	26 ns
Series:	OptiMOS 5
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	77 ns
Typical Turn-On Delay Time:	33 ns
Part # Aliases:	IPB020N10N5LF SP001503854
Unit Weight:	1,562 g

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Datasheet

IPB020N10N5LFATMA1 Datasheet (PDF)

Application Notes

Product Catalogs

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

OptiMOS™ Linear FETs

Infineon Technologies OptiMOS™ Linear FET is a solution to avoid the trade-off between on-state resistance R_DS(on) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. The devices feature the state-of-the-art R_DS(on) of a trench MOSFET and a classic planar MOSFET's wide, safe operating area. The OptiMOS Linear FET prevents damage at the load by limiting high in-rush currents.

Residential Energy Storage Systems (ESS)

Infineon Residential Storage Solutions (ESS) offers various products to create and manage resilient energy infrastructures. Infineon's distinctive expertise in energy generation, power conversion, transmission, and battery management makes it an ideal natural partner to advance Energy Storage Solutions, especially in terms of efficiency, innovation, performance, and optimal cost.