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IPB60R120P7ATMA1

Name: Infineon IPB60R120P7ATMA1
Brand: Infineon Technologies
SKU: 726-IPB60R120P7ATMA1
Price: 3.53 EUR
Availability: InStock

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Mouser No:

726-IPB60R120P7ATMA1

Mfr. No:

IPB60R120P7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs HIGH POWER_NEW

Datasheet:

IPB60R120P7ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPB60R120P7ATMA1

In Stock: 6.345

Stock:: 6.345 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,53 €	3,53 €
	2,31 €	23,10 €
	1,69 €	169,00 €
	1,47 €	735,00 €
Full Reel (Order in multiples of 1000)
	1,35 €	1.350,00 €
	1,27 €	2.540,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	36 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	95 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MT
Country of Diffusion:	MY
Country of Origin:	AT
Fall Time:	6 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	CoolMOS P7
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	81 ns
Typical Turn-On Delay Time:	21 ns
Part # Aliases:	IPB60R120P7 SP001664922
Unit Weight:	4 g

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Datasheet

IPB60R120P7ATMA1 Datasheet (PDF)

Application Notes

Product Catalogs

SPICE Models

MOSFET CoolMOS™ P7 600V PSpice (Zip)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

600V CoolMOS P7 Power Transistors

Infineon 600V CoolMOS P7 Power Transistors are 7th generation devices that utilise revolutionary technology for high-voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast-switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, an outstandingly robust body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
Learn more

CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

USB-C Chargers & Adapters

Infineon Technologies offers tailor-made semiconductors that consider customers’ priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C™ source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery, and ESD protection devices.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.