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IPB90N06S4L04ATMA2

Name: Infineon IPB90N06S4L04ATMA2
Brand: Infineon Technologies
SKU: 726-IPB90N06S4L04ATM
Price: 2.8 EUR
Availability: InStock

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Mouser No:

726-IPB90N06S4L04ATM

Mfr. No:

IPB90N06S4L04ATMA2

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 60V 90A D2PAK-2

Datasheet:

IPB90N06S4L04ATMA2 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPB90N06S4L04ATMA2

In Stock: 493

Stock:: 493 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,80 €	2,80 €
	1,82 €	18,20 €
	1,26 €	126,00 €
	1,06 €	530,00 €
Full Reel (Order in multiples of 1000)
	0,963 €	963,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	3.4 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	1.7 V
Qg - Gate Charge:	170 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	MY
Country of Origin:	MY
Fall Time:	20 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	OptiMOS T2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	140 ns
Typical Turn-On Delay Time:	21 ns
Part # Aliases:	IPB90N06S4L-04 SP001028756
Unit Weight:	4 g

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Datasheet

IPB90N06S4L04ATMA2 Datasheet (PDF)

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PSpice Modelle OptiMOS-T2 60V (Zip)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.