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IPD090N03LGATMA1

Name: Infineon IPD090N03LGATMA1
Brand: Infineon Technologies
SKU: 726-IPD090N03LGATMA1
Price: 0.93 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-IPD090N03LGATMA1

Mfr. No:

IPD090N03LGATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 30V 40A DPAK-2

Datasheet:

IPD090N03LGATMA1 Datasheet (PDF)

ECAD Model:

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In Stock: 6.251

Stock:: 6.251 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,937 €	0,94 €
	0,502 €	5,02 €
	0,38 €	38,00 €
	0,294 €	147,00 €
	0,266 €	266,00 €
Full Reel (Order in multiples of 2500)
	0,221 €	552,50 €
	0,212 €	1.060,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	7.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	42 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	2.6 ns
Forward Transconductance - Min:	53 S
Product Type:	MOSFETs
Rise Time:	3 ns
Series:	OptiMOS 3
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	4 ns
Part # Aliases:	IPD090N03L G SP000680636
Unit Weight:	330 mg

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Filter Document:

Datasheet

IPD090N03LGATMA1 Datasheet (PDF)

Models

Product Catalogs

SPICE Models

Simulation Model OptiMOS™ Power MOSFET PSpice 30V N-Channel (Zip)

Test/Quality Data

MCDS_2013-08-29_07-13-25_MA000687270_PG-TO252-3-311.pdf (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

30V HEXFET® Power MOSFETs

Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12V_IN / 1V to 3V_OUT DC-DC synchronous buck converter applications.