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IPDQ60R037CM8XTMA1

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See Product Specifications

Mouser No:

726-IPDQ60R037CM8XTM

Mfr. No:

IPDQ60R037CM8XTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs HIGH POWER_NEW

Lifecycle:

New At Mouser

Datasheet:

IPDQ60R037CM8XTMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPDQ60R037CM8XTMA1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	HDSOP-22
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	65 A
Rds On - Drain-Source Resistance:	37 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.7 V
Qg - Gate Charge:	79 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	338 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	5.8 ns
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	7.6 ns
Series:	600V CM8
Factory Pack Quantity:	750
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	101.6 ns
Typical Turn-On Delay Time:	20.6 ns
Part # Aliases:	IPDQ60R037CM8 SP005578047

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Datasheet

IPDQ60R037CM8XTMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolMOS™ 8 SJ MOSFETs

Infineon Technologies CoolMOS™ 8 SJ MOSFETs are high-voltage super-junction MOSFET technology solutions. The Infineon Technologies CoolMOS 8 has an integrated fast body diode and is ideal for diverse applications. The CoolMOS 8 enhances Infineon's wide-bandgap (WBG) portfolio as the successor to the 600V CoolMOS 7 MOSFET family.