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IPP65R190CFDXKSA2

Name: Infineon IPP65R190CFDXKSA2
Brand: Infineon Technologies
SKU: 726-IPP65R190CFDXKSA
Price: 3.05 EUR
Availability: OutOfStock

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Mouser No:

726-IPP65R190CFDXKSA

Mfr. No:

IPP65R190CFDXKSA2

Mfr.:

Infineon Technologies

Description:

MOSFETs HIGH POWER_LEGACY

Datasheet:

IPP65R190CFDXKSA2 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPP65R190CFDXKSA2

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,05 €	3,05 €
	1,55 €	15,50 €
	1,40 €	140,00 €
	1,19 €	595,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	17.5 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	151 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	6.4 ns
Product Type:	MOSFETs
Rise Time:	8.4 ns
Series:	CFD2
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	53.2 ns
Typical Turn-On Delay Time:	12 ns
Part # Aliases:	IPP65R190CFD SP001987350
Unit Weight:	2 g

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Datasheet

IPP65R190CFDXKSA2 Datasheet (PDF)

Application Notes

Other

Packaging:PG-TO220-3-1 | IPP65R190CFDXKSA1 (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

CoolMOS® Power Transistors

Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.