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IR2010PBF

Name: Infineon IR2010PBF
Brand: Infineon Technologies
SKU: 942-IR2010PBF
Price: 4.41 EUR
Availability: InStock

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Mouser No:

942-IR2010PBF

Mfr. No:

IR2010PBF

Mfr.:

Infineon Technologies

Description:

Gate Drivers 200V high & low-side 3A,Shutdown,95ns

Datasheet:

IR2010PBF Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 322

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,41 €	4,41 €
	3,37 €	33,70 €
	3,10 €	77,50 €
	2,82 €	282,00 €
	2,45 €	612,50 €
	2,38 €	1.190,00 €
	2,28 €	2.280,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	High-Side, Low-Side
Mounting Style:	Through Hole
Package/Case:	PDIP-14
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	3 A
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	20 ns
Fall Time:	25 ns
Minimum Operating Temperature:	- 25 C
Maximum Operating Temperature:	+ 125 C
Series:	IR(S)201X
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Logic Type:	CMOS, LSTTL
Maximum Turn-Off Delay Time:	65 ns
Maximum Turn-On Delay Time:	95 ns
Operating Supply Current:	230 uA
Pd - Power Dissipation:	1.6 W
Product Type:	Gate Drivers
Propagation Delay - Max:	135 ns
Shutdown:	Shutdown
Factory Pack Quantity:	1500
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER
Unit Weight:	1,620 g

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Datasheet

IR2010PBF Datasheet (PDF)

Application Notes

Models

IR2010PBF Symbol & Footprint by SnapMagic

Product Catalogs

Technical Resources

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TARIC:: 8542319000
CNHTS:: 8542391000
CAHTS:: 8542310000
USHTS:: 8542310075
KRHTS:: 8542311000
MXHTS:: 8542310302
ECCN:: EAR99

200V Level-Shift Gate Drivers

Infineon 200V Level-Shift Gate Drivers include 3-phase, half-bridge, or high-side and low-side drivers for low (24V, 36V and 48V) and medium voltage (60V, 80V, 100V and 120V) motor control applications. The 3-phase product incorporates Infineon’s unique Silicon-On-Insulator (SOI) level-shift technology. This feature provides functional isolation, industry-leading negative VS robustness and fewer level-shift losses. A solution with integrated Bootstrap Diodes (BSD) is also available, which will reduce BOM costs, simplify the layout and reduce PCB size.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.