IR2010SPBF

Infineon Technologies
942-IR2010SPBF
IR2010SPBF

Mfr.:

Description:
Gate Drivers 200V high & low-side 3A,Shutdown,95ns

Datasheet:
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Learn more about Infineon Technologies IR2010SPBF

In Stock: 12.126

Stock:
12.126 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,15 € 3,15 €
2,37 € 23,70 €
2,07 € 51,75 €
1,92 € 192,00 €
1,84 € 460,00 €
1,77 € 885,00 €
1,57 € 1.570,00 €
1,49 € 2.950,20 €
1,46 € 8.672,40 €

Alternative Packaging

Mfr. Part No.:
IR2010STRPBF
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
2,94 €
Min:
1

Possible Replacement

Infineon Technologies IR2010STRPBF
Infineon Technologies
Gate Drivers 200V high & low-side 3A,Shutdown,95ns
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SOIC-16
2 Driver
2 Output
3 A
10 V
20 V
20 ns
25 ns
- 25 C
+ 125 C
IR(S)201X
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Logic Type: CMOS, LSTTL
Maximum Turn-Off Delay Time: 65 ns
Maximum Turn-On Delay Time: 95 ns
Moisture Sensitive: Yes
Operating Supply Current: 230 uA
Pd - Power Dissipation: 1.25 W
Product Type: Gate Drivers
Propagation Delay - Max: 135 ns
Shutdown: Shutdown
Factory Pack Quantity: 1980
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Unit Weight: 666 mg
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TARIC:
8542319000
CNHTS:
8542399000
CAHTS:
8542310000
USHTS:
8542390090
KRHTS:
8542311000
MXHTS:
8542399999
ECCN:
EAR99

200V Level-Shift Gate Drivers

Infineon 200V Level-Shift Gate Drivers include 3-phase, half-bridge, or high-side and low-side drivers for low (24V, 36V and 48V) and medium voltage (60V, 80V, 100V and 120V) motor control applications. The 3-phase product incorporates Infineon’s unique Silicon-On-Insulator  (SOI) level-shift technology. This feature provides functional isolation, industry-leading negative VS robustness and fewer level-shift losses. A solution with integrated Bootstrap Diodes (BSD) is also available, which will reduce BOM costs, simplify the layout and reduce PCB size.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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