IR2011PBF

Infineon Technologies
942-IR2011PBF
IR2011PBF

Mfr.:

Description:
Gate Drivers 200V high & low-side ,1A,80ns,PDIP8

Datasheet:
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Learn more about Infineon Technologies IR2011PBF

In Stock: 1.907

Stock:
1.907 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,36 € 3,36 €
2,50 € 25,00 €
2,16 € 54,00 €
2,05 € 205,00 €
1,94 € 485,00 €
1,88 € 940,00 €
1,77 € 1.770,00 €
1,72 € 5.160,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
Driver ICs - Various
High-Side, Low-Side
Through Hole
PDIP-8
2 Driver
2 Output
1 A
10 V
20 V
35 ns
20 ns
- 25 C
+ 125 C
IR(S)201X
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Logic Type: CMOS, LSTTL
Maximum Turn-Off Delay Time: 75 ns
Maximum Turn-On Delay Time: 80 ns
Operating Supply Current: 230 uA
Pd - Power Dissipation: 1 W
Product Type: Gate Drivers
Propagation Delay - Max: 80 ns
Shutdown: No Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Unit Weight: 1 g
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TARIC:
8542319000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542310075
KRHTS:
8542311000
MXHTS:
8542310302
ECCN:
EAR99

200V Level-Shift Gate Drivers

Infineon 200V Level-Shift Gate Drivers include 3-phase, half-bridge, or high-side and low-side drivers for low (24V, 36V and 48V) and medium voltage (60V, 80V, 100V and 120V) motor control applications. The 3-phase product incorporates Infineon’s unique Silicon-On-Insulator  (SOI) level-shift technology. This feature provides functional isolation, industry-leading negative VS robustness and fewer level-shift losses. A solution with integrated Bootstrap Diodes (BSD) is also available, which will reduce BOM costs, simplify the layout and reduce PCB size.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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