IR2214SSPBF

Infineon Technologies
942-IR2214SSPBF
IR2214SSPBF

Mfr.:

Description:
Gate Drivers 1200V half-bridge,3A DESAT &Soft SD,440n

Datasheet:
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In Stock: 2.620

Stock:
2.620 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,07 € 6,07 €
4,64 € 46,40 €
4,00 € 100,00 €
3,85 € 385,00 €
3,73 € 932,50 €
3,71 € 1.855,00 €
3,62 € 3.620,00 €
4.400 Quote

Alternative Packaging

Mfr. Part No.:
IR2214SSTRPBF
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
6,08 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
SSOP-24
2 Driver
2 Output
2 A
11.5 V
20 V
Non-Inverting
24 ns
7 ns
- 40 C
+ 150 C
IR221X
Tube
Brand: Infineon Technologies
Country of Assembly: MY
Country of Diffusion: TW
Country of Origin: TW
Logic Type: CMOS
Maximum Turn-Off Delay Time: 440 ns
Maximum Turn-On Delay Time: 440 ns
Moisture Sensitive: Yes
Operating Supply Current: 2.5 mA
Pd - Power Dissipation: 1.5 W
Product Type: Gate Drivers
Propagation Delay - Max: 660 ns
Rds On - Drain-Source Resistance: 60 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 2200
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Unit Weight: 1,700 g
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TARIC:
8542319000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
KRHTS:
8542311000
MXHTS:
8542310302
ECCN:
EAR99

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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