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IRLML2030TRPBF

Name: Infineon IRLML2030TRPBF
Brand: Infineon Technologies
SKU: 942-IRLML2030TRPBF
Price: 0.33 EUR
Availability: InStock

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See Product Specifications

Mouser No:

942-IRLML2030TRPBF

Mfr. No:

IRLML2030TRPBF

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFT 30V 2.7A 100mOhm 1.0nC

Datasheet:

IRLML2030TRPBF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IRLML2030TRPBF

In Stock: 22.331

Stock:: 22.331

Can Dispatch Immediately

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On Order:: 78.000
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,335 €	0,34 €
	0,202 €	2,02 €
	0,12 €	12,00 €
	0,101 €	50,50 €
	0,09 €	90,00 €
Full Reel (Order in multiples of 3000)
	0,075 €	225,00 €
	0,068 €	408,00 €
	0,058 €	522,00 €
	0,055 €	1.320,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	2.7 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.3 W
Channel Mode:	Enhancement
Tradename:	HEXFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	GB
Country of Origin:	IL
Fall Time:	2.9 ns
Forward Transconductance - Min:	2.6 S
Product Type:	MOSFETs
Rise Time:	3.3 ns
Series:	N-Channel
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	4.5 ns
Typical Turn-On Delay Time:	4.1 ns
Unit Weight:	8 mg

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Filter Document:

Datasheet

IRLML2030TRPBF Datasheet (PDF)

Models

Saber Model - IRLML2030 (CAD)

Product Catalogs

SPICE Models

Spice Model - IRLML2030

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

30V HEXFET® Power MOSFETs

Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12V_IN / 1V to 3V_OUT DC-DC synchronous buck converter applications.