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S25FL128SAGBHEA00

Name: Infineon S25FL128SAGBHEA00
Brand: Infineon Technologies
SKU: 727-25FL128SAGBHEA00
Price: 35.48 EUR
Availability: OutOfStock

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Mouser No:

727-25FL128SAGBHEA00

Mfr. No:

S25FL128SAGBHEA00

Mfr.:

Infineon Technologies

Description:

NOR Flash A&D

Datasheet:

S25FL128SAGBHEA00 Datasheet (PDF)

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Learn more about Infineon Technologies S25FL128SAGBHEA00

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Factory Lead Time:: 8 Weeks Estimated factory production time.

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Minimum: 3380 Multiples: 3380

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	35,48 €	119.922,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	NOR Flash
Delivery Alerts:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	BGA-24
Series:	S25FL128S
Memory Size:	128 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	100 mA
Interface Type:	SPI
Maximum Clock Frequency:	133 MHz
Organisation:	16 M x 8
Data Bus Width:	8 bit
Timing Type:	Synchronous
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	133 MHz
Factory Pack Quantity:	3380
Subcategory:	Memory & Data Storage
Tradename:	MirrorBit
Unit Weight:	8,311 g

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Datasheet

S25FL128SAGBHEA00 Datasheet (PDF)

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TARIC:: 8542326100
USHTS:: 8542320051
ECCN:: 3A001.a.2.c

S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT™ technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands.

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25 MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25 MIRRORBIT™ Flash Non-Volatile Memory uses MIRRORBIT technology, which stores two data bits in each memory array transistor; Eclipse architecture dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Infineon S25 MIRRORBIT Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V V_IO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL Serial NOR Flash Memory

Infineon Technologies FL Serial NOR Flash Memory offers a reduced pin count while providing optimal read/write performance. This feature makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics, and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. The Infineon FL family has four product groups: FL-S, FL-L, FL1-K, and FL-P.