S29GL01GS10DHI010

Infineon Technologies
797-S29GL01GS10DHI01
S29GL01GS10DHI010

Mfr.:

Description:
NOR Flash 1G 3V 100ns Parallel NOR Flash

ECAD Model:
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In Stock: 639

Stock:
639 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
15,52 € 15,52 €
14,41 € 144,10 €
13,96 € 349,00 €
13,61 € 680,50 €
13,28 € 1.328,00 €
12,82 € 3.205,00 €
12,14 € 6.312,80 €

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
13,99 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: NOR Flash
RoHS:  
SMD/SMT
FBGA-64
S29GL01G/512/256/128S
1 Gbit
2.7 V
3.6 V
60 mA
Parallel
64 M x 16
16 bit
Asynchronous
- 40 C
+ 85 C
Tray
Brand: Infineon Technologies
Country of Assembly: TH
Country of Diffusion: CN
Country of Origin: CN
Moisture Sensitive: Yes
Product Type: NOR Flash
Speed: 100 ns
Factory Pack Quantity: 520
Subcategory: Memory & Data Storage
Tradename: MirrorBit
Unit Weight: 8,455 g
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Attributes selected: 0

TARIC:
8542326100
CNHTS:
8542329000
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
3A991.b.1.a

S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.