IME4G32L4HABG-062I

Intelligent Memory
822-IME4G32L4HABG62I
IME4G32L4HABG-062I

Mfr.:

Description:
DRAM ECC LPDDR4, 4Gb, 1.1V, 128Mx32, 1600MHz (3200Mbps), -40C to +95C, FBGA-200

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
26 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
33,82 € 33,82 €
31,30 € 313,00 €
30,31 € 757,75 €
29,56 € 1.478,00 €

Product Attribute Attribute Value Select Attribute
Intelligent Memory
Product Category: DRAM
RoHS:  
SDRAM - LPDDR4
4 Gbit
32 bit
1.6 GHz
FBGA-200
128 M x 32
1.06 V
1.17 V
- 40 C
+ 95 C
IME4G32L4
Tray
Brand: Intelligent Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 68
Subcategory: Memory & Data Storage
Supply Current - Max: 18 mA
Unit Weight: 245 mg
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

Dynamic Random Access Memory (DRAM)

Intelligent Memory Dynamic Random Access Memory (DRAM) includes a full range of JEDEC-compliant DRAMs and ECC DRAMs (SDRAM, DDR, DDR2, DDR3, DDR4, LPDDR4). From an application's point of view, these components work like a monolithic device. The DRAM devices allow for maximum levels of memory density without altering existing board layouts or designs.

2G/4G/8Gbit LPDDR4 DRAM with ECC

Intelligent Memory 2G/4G/8Gbit Low-Power Double Data Rate DRAM (LPDDR4) with integrated error correction (ECC) operates over the industrial temperature range and consumes less energy. The LPDDR4 devices feature a low 1.8V power supply and 1.1V at input/output. These AEC-Q100-qualified components offer a 1600MHz maximum speed with a 3200Mbps data rate and are available in a 200-ball FBGA package.

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