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3N163-SOT-143-4L-TR

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See Product Specifications

Mouser No:

722-3N163-SOT1434LTR

Mfr. No:

3N163-SOT-143-4L-TR

Mfr.:

Linear Integrated Systems

Description:

MOSFETs SINGLE, P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet:

3N163-SOT-143-4L-TR Datasheet (PDF)

ECAD Model:

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Learn more about Linear Integrated Systems 3N163-SOT-143-4L-TR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Linear Integrated Systems
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-143-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	30 mA
Rds On - Drain-Source Resistance:	250 Ohms
Vgs - Gate-Source Voltage:	- 6.5 V, 6.5 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Pd - Power Dissipation:	350 mW, 375 mW
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	Linear Integrated Systems
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Forward Transconductance - Min:	2 mS
Product Type:	MOSFETs
Rise Time:	24 ns
Series:	3N163
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	12 ns

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Attributes selected: 0

Filter Document:

TARIC:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

3N163 P-Channel Enhancement Mode MOSFETs

Linear Integrated Systems 3N163 P-Channel Enhancement Mode MOSFETs feature high input impedance, high gate breakdown, ultra-low leakage, and low capacitance. These MOSFETs offer -40V drain-source or drain-gate voltage, 50mA drain current, and 375mW (TO-72 case), and 350mW (SOT-143 case) power dissipation. The 3N163 P-Channel MOSFETs are available in the TO-72 RoHS, SOT-143 RoHS package, and as bare die. These MOSFETs are ideal for amplifier and switching applications.