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CGH60015D-GP4

Name: MACOM CGH60015D-GP4
Brand: MACOM
SKU: 941-CGH60015D
Price: 106.42 EUR
Availability: InStock

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Mouser No:

941-CGH60015D

Mfr. No:

CGH60015D-GP4

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT Die DC-6.0GHz, 15 Watt

Datasheet:

CGH60015D-GP4 Datasheet (PDF)

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Learn more about MACOM CGH60015D-GP4

In Stock: 50

Stock:: 50 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 50 will be subject to minimum order requirements.

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Minimum: 10 Multiples: 10

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	106,42 €	1.064,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	Die
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	1.5 A
Rds On - Drain-Source Resistance:	1 Ohms
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Brand:	MACOM
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	15 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	4 GHz
Output Power:	15 W
Packaging:	Waffle
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	3,698 g

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Datasheet

CGH60015D-GP4 Datasheet (PDF)

PCN

TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290040
JPHTS:: 854239099
KRHTS:: 8541291000
MXHTS:: 8542399901
ECCN:: EAR99

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.