It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CGH60060D-GP4

Name: MACOM CGH60060D-GP4
Brand: MACOM
SKU: 941-CGH60060D
Price: 155.43 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

941-CGH60060D

Mfr. No:

CGH60060D-GP4

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT Die DC-6.0GHz, 60 Watt

Datasheet:

CGH60060D-GP4 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about MACOM CGH60060D-GP4

Delivery Alerts:

This product may require additional documentation to export from the United States.

In Stock: 40

Stock:: 40 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 10 Multiples: 10

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	155,43 €	1.554,30 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Alerts:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	Die
Transistor Polarity:	N-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	250 mOhms
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Brand:	MACOM
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	13 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	4 GHz
Output Power:	60 W
Packaging:	Waffle
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	5,302 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
Cree RF Products

Mouser is not authorized to break pack on these products.

Please contact a Mouser Technical Sales Representative for
further information.

5-0614-38

Filter Document:

Datasheet

CGH60060D-GP4 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541290040
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.a.4

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.