CGHV40320D-GP4

MACOM
941-CGHV40320D
CGHV40320D-GP4

Mfr.:

Description:
GaN FETs GaN HEMT Die DC-4.0GHz, 320 Watt

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about MACOM CGHV40320D-GP4
This product may require additional documentation to export from the United States.

In Stock: 30

Stock:
30 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 30 will be subject to minimum order requirements.
Minimum: 10   Multiples: 10
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
696,73 € 6.967,30 €

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Delivery Alerts:
 This product may require additional documentation to export from the United States.
RoHS:  
SMD/SMT
Die
N-Channel
50 V
Brand: MACOM
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Maximum Operating Frequency: 4 GHz
Minimum Operating Frequency: 0 Hz
Output Power: 320 W
Packaging: Gel Pack
Product: GaN HEMTs
Product Type: GaN FETs
Factory Pack Quantity: 10
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Unit Weight: 649 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0 

                        
Cree RF Products

Mouser is not authorized to break pack on these products.

Please contact a Mouser Technical Sales Representative for
further information.

5-0614-38

Datasheet

PCN

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290040
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
85412999
ECCN:
3A001.b.3.a.4

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.