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MSC030SDA120BCT

Name: Microchip MSC030SDA120BCT
Brand: Microchip Technology
SKU: 494-MSC030SDA120BCT
Price: 17.49 EUR
Availability: InStock

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Mouser No:

494-MSC030SDA120BCT

Mfr. No:

MSC030SDA120BCT

Mfr.:

Microchip Technology

Description:

SiC Schottky Diodes SIC SBD 1200 V 30 A TO-247

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Datasheet:

MSC030SDA120BCT Datasheet (PDF)

ECAD Model:

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In Stock: 44

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	17,49 €	17,49 €
	16,13 €	161,30 €
	14,61 €	438,30 €
	14,04 €	1.684,80 €
	14,03 €	7.155,30 €
1.020	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Configuration:	Dual
If - Forward Current:	65 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	165 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Microchip Technology
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Pd - Power Dissipation:	259 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV

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TARIC:: 8541100000
CNHTS:: 8504409190
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.