MC33GD3000EPR2

NXP Semiconductors
841-MC33GD3000EPR2
MC33GD3000EPR2

Mfr.:

Description:
Motor/Motion/Ignition Controllers & Drivers Brushless DC Motor Gate Driver, 3-Phase, 5-60V, 1A, QFN 56

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
24 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 2000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2000)
2,78 € 5.560,00 €
2,76 € 11.040,00 €

Alternative Packaging

Mfr. Part No.:
Packaging:
Tray
Availability:
In Stock
Price:
5,04 €
Min:
1

Product Attribute Attribute Value Select Attribute
NXP
Product Category: Motor/Motion/Ignition Controllers & Drivers
RoHS:  
Fan / Motor Controllers / Drivers
3 Phase
1 A to 2.5 A
10 mA
- 40 C
+ 150 C
SMD/SMT
HVQFN-56
Reel
Brand: NXP Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Output Voltage: 4.5 V to 5.5 V
Product Type: Motor / Motion / Ignition Controllers & Drivers
Series: GD3000
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 60 V
Supply Voltage - Min: 6 V
Part # Aliases: 935316315528
Unit Weight: 0,001 mg
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Attributes selected: 0

TARIC:
8542399000
CNHTS:
8542319000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99

GD3000 3-Phase Brushless Motor Pre-Drivers

NXP Semiconductors GD3000 3-Phase Brushless Motor Pre-Drivers are highly efficient gate driver ICs for three-phase motor drive applications. The NXP Semiconductors GD3000 features three half-bridge drivers, each capable of driving two N-channel MOSFETs. With a peak current capability ranging from 1A to 2.5A, this pre-driver operates on a single power supply with a broad range from 6V to 60V and incorporates 75V transient protection. Utilizing a bootstrap gate driver architecture with trickle charge circuitry, the GD3000 supports a 100% duty cycle. Additionally, it employs programmable cross-talk protection to prevent current flow during high-side or low-side MOSFET switching. Integrated VDS sensing of both MOSFETs safeguards the external power stage against over-current conditions. Including a current shunt amplifier enables accurate current measurement for phase error detection.