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MC33GD3100BEKR2

Name: NXP MC33GD3100BEKR2
Brand: NXP Semiconductors
SKU: 771-MC33GD3100BEKR2
Price: 4.83 EUR
Availability: OutOfStock

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Mouser No:

771-MC33GD3100BEKR2

Mfr. No:

MC33GD3100BEKR2

Mfr.:

NXP Semiconductors

Description:

Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters

Datasheet:

MC33GD3100BEKR2 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	4,83 €	4.830,00 €
	4,80 €	9.600,00 €
5.000	Quote

Alternative Packaging

Mfr. Part No.:

MC33GD3100BEK

Packaging:

Tube

Availability:

In Stock

Price:

8,66 €

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	GD3100
Mounting Style:	SMD/SMT
Package/Case:	WSOIC-32
Number of Channels:	1 Channel
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Brand:	NXP Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Development Kit:	FRDMGD3100HB8EVM
Moisture Sensitive:	Yes
Product:	IGBT, SiC Gate Driver
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	500 mohms
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	40 V
Supply Voltage - Min:	5 V
Technology:	SiC
Type:	Single Channel Gate Driver
Part # Aliases:	935444121518

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Datasheet

MC33GD3100BEKR2 Datasheet (PDF)

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USHTS:: 8542390070

MC33GD3100 Advanced IGBT/SiC Gate Drivers

NXP Semiconductors MC33GD3100 Advanced IGBT/SiC Gate Drivers are single-channel gate drivers for insulated-gate bipolar transistors (IGBT) and Silicon Carbide (SiC) power devices. The NXP MC33GD3100 Gate Drivers feature advanced functional safety, control, and protection features, making it ideal for automotive and EV powertrain applications (fully AEC-Q100 grade 1 qualified). Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage, and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT stress during faults. Accurate and configurable under-voltage lockout (UVLO) protects while ensuring sufficient gate drive voltage headroom.