MGD3162AM551EKT

Name: NXP MGD3162AM551EKT
Brand: NXP Semiconductors
SKU: 771-MGD3162AM551EKT
Price: 10.1 EUR
Availability: InStock

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Mouser No:

771-MGD3162AM551EKT

Mfr. No:

MGD3162AM551EKT

Mfr.:

NXP Semiconductors

Description:

Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters

Datasheet:

MGD3162AM551EKT Datasheet (PDF)

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In Stock: 1.238

Stock:: 1.238

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On Order:: 1.408
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	10,10 €	10,10 €
	7,91 €	79,10 €
	7,36 €	184,00 €
	6,58 €	658,00 €
	6,37 €	1.121,12 €
	6,28 €	3.315,84 €
2.640	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	GD3162
Mounting Style:	SMD/SMT
Package/Case:	SOIC-32
Number of Channels:	1 Channel
Isolation Voltage:	8 kVrms
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	NXP Semiconductors
Country of Assembly:	CN
Country of Diffusion:	US
Country of Origin:	CN
Moisture Sensitive:	Yes
Product:	Gate Drivers
Rds On - Drain-Source Resistance:	500 mOhms
Factory Pack Quantity:	176
Supply Voltage - Max:	6 V
Supply Voltage - Min:	4.75 V
Type:	IGBT/SiC Gate Driver
Part # Aliases:	935451596557

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Datasheet

MGD3162AM551EKT Datasheet (PDF)

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CNHTS:: 8542391090
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

GD3162 Advanced IGBT/SiC Gate Drivers

NXP Semiconductors GD3162 Advanced IGBT/SiC Gate Drivers are designed to drive SiC and IGBT modules in xEV traction inverters. The NXP Semiconductors GD3162 drivers enable space savings and performance through advanced gate-drive functionality. The device includes integrated galvanic isolation, a programmable SPI interface, and advanced protection features like overtemperature, desaturation, and current sense protection. With integrated boost capability, the GD3162 can directly drive most SiC MOSFET and IGBT/SiC module gates.

Electric Vehicle (EV) Traction Inverters

NXP Semiconductors Electric Vehicle (EV) Traction Inverters are critical devices in electric vehicles that convert DC power from the battery to AC power to drive the traction motor. The inverters provide high power levels from 80kW to over 200kW to withstand high temperatures while being lightweight.