MGD3162AM581EKR2

Name: NXP MGD3162AM581EKR2
Brand: NXP Semiconductors
SKU: 771-MGD3162AM581EKR2
Price: 6.22 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

771-MGD3162AM581EKR2

Mfr. No:

MGD3162AM581EKR2

Mfr.:

NXP Semiconductors

Description:

Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters

Datasheet:

MGD3162AM581EKR2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about NXP Semiconductors MGD3162AM581EKR2

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1000 Multiples: 1000

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	6,22 €	6.220,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	GD3162
Mounting Style:	SMD/SMT
Package/Case:	SOIC-32
Number of Channels:	1 Channel
Isolation Voltage:	8 kVrms
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Brand:	NXP Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Output Voltage:	25 V
Product:	Gate Drivers
Factory Pack Quantity:	1000
Type:	IGBT/SiC Gate Driver
Part # Aliases:	935453294518

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

MGD3162AM581EKR2 Datasheet (PDF)

USHTS:: 8542390070

GD3162 Advanced IGBT/SiC Gate Drivers

NXP Semiconductors GD3162 Advanced IGBT/SiC Gate Drivers are designed to drive SiC and IGBT modules in xEV traction inverters. The NXP Semiconductors GD3162 drivers enable space savings and performance through advanced gate-drive functionality. The device includes integrated galvanic isolation, a programmable SPI interface, and advanced protection features like overtemperature, desaturation, and current sense protection. With integrated boost capability, the GD3162 can directly drive most SiC MOSFET and IGBT/SiC module gates.

Electric Vehicle (EV) Traction Inverters

NXP Semiconductors Electric Vehicle (EV) Traction Inverters are critical devices in electric vehicles that convert DC power from the battery to AC power to drive the traction motor. The inverters provide high power levels from 80kW to over 200kW to withstand high temperatures while being lightweight.