PCDB10120G1_R2_00001

Panjit
241-PCDB10120G1T0001
PCDB10120G1_R2_00001

Mfr.:

Description:
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode

Datasheet:
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In Stock: 2.270

Stock:
2.270 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 2270 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 800)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
6,17 € 6,17 €
4,17 € 41,70 €
3,89 € 389,00 €
Full Reel (Order in multiples of 800)
3,89 € 3.112,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
D2PAK-3 (TO-263-3)
Single
10 A
1.2 kV
1.5 V
640 A
6 uA
- 55 C
+ 175 C
Reel
Cut Tape
MouseReel
Brand: Panjit
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Pd - Power Dissipation: 164.8 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 800
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Unit Weight: 1,380 g
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Attributes selected: 0

Datasheet

PCN

TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.

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