QPD1008

Qorvo
772-QPD1008
QPD1008

Mfr.:

Description:
GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN

Datasheet:
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Learn more about Qorvo QPD1008

In Stock: 19

Stock:
19
Can Dispatch Immediately
On Order:
1
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
347,80 € 347,80 €
266,63 € 6.665,75 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
NI-360
N-Channel
50 V
4 A
- 2.8 V
- 40 C
+ 85 C
127 W
Brand: Qorvo
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Development Kit: QPD1008PCB401
Gain: 17.5 dB
Maximum Operating Frequency: 3.2 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 162 W
Packaging: Tray
Product Type: GaN FETs
Series: QPD1008
Factory Pack Quantity: 25
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Vgs - Gate-Source Breakdown Voltage: 145 V
Unit Weight: 16,048 g
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Datasheet

PCN

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TARIC:
8542399000
CNHTS:
8541290000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399999
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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